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1

Surface photovoltage measurements and Fermi level pinning: comments on “development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds”

Journal:

Thin Solid Films

Année:

1982

Langue:

english

Fichier:

PDF, 393 KB

english, 1982

2

Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces

Chang, S., Vitomirov, I. M., Brillson, L. J., Mailhiot, C., Rioux, D. F., Kime, Y. J., Kirchner, P. D., Pettit, G. D., Woodall, J. M.

Journal:

Physical Review B

Année:

1992

Langue:

english

Fichier:

PDF, 694 KB

english, 1992

3

Role of cation dissociation in Schottky barrier formation at II–VI compound semiconductor-metal interfaces

C.F. Brucker, L.J. Brillson

Journal:

Thin Solid Films

Année:

1982

Langue:

english

Fichier:

PDF, 448 KB

english, 1982

4

Interface chemical reaction and diffusion of thin metal films on semiconductors

Journal:

Thin Solid Films

Année:

1982

Langue:

english

Fichier:

PDF, 500 KB

english, 1982

5

Studies of CaF2-CdSe interfaces using UV and X-ray photoemission spectroscopy and Auger electron spectroscopy

Yoram Shapira, C.F. Brucker, L.J. Brillson

Journal:

Thin Solid Films

Année:

1986

Langue:

english

Fichier:

PDF, 338 KB

english, 1986

6

Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

A. P. Young, J. Schäfer, L. J. Brillson, Y. Yang, S. H. Xu, H. Cruguel, G. J. Lapeyre, M. A. L. Johnson, J. F. Schetzina

Journal:

Journal of Electronic Materials

Année:

1999

Langue:

english

Fichier:

PDF, 190 KB

english, 1999

7

Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement

Bradley, S.T., Young, A.P., Brillson, L.J., Murphy, M.J., Schaff, W.J., Eastman, L.E.

Journal:

IEEE Transactions on Electron Devices

Année:

2001

Langue:

english

Fichier:

PDF, 59 KB

english, 2001

8

ZnO Schottky barriers and Ohmic contacts

Brillson, Leonard J., Lu, Yicheng

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 9.27 MB

english, 2011

9

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Xinwen Hu,, Karmarkar, A.P., Bongim Jun,, Fleetwood, D.M., Schrimpf, R.D., Geil, R.D., Weller, R.A., White, B.D., Bataiev, M., Brillson, L.J., Mishra, U.K.

Journal:

IEEE Transactions on Nuclear Science

Année:

2003

Langue:

english

Fichier:

PDF, 356 KB

english, 2003

10

Raman observation of the ferroelectric phase transition in SnTe

Brillson, L. J., Burstein, E., Muldawer, L.

Journal:

Physical Review B

Année:

1974

Langue:

english

Fichier:

PDF, 381 KB

english, 1974

11

Electron-excited luminescence of SiC surfaces and interfaces

Brillson, L J, Tumakha, S, Okojie, R S, Zhang, M, Pirouz, P

Journal:

Journal of Physics Condensed Matter

Année:

2004

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2004

12

Controlled gate surface processing of AlGaN∕GaN high electron mobility transistors

Walker, Dennis E., Fitch, Robert C., Gillespie, James K., Jessen, Gregg H., Cassity, Paul D., Breedlove, Joseph R., Brillson, Leonard J.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 766 KB

english, 2006

13

Thermal and doping dependence of 4H-SiC polytype transformation

Brillson, L. J., Tumakha, S., Jessen, G. H., Okojie, R. S., Zhang, M., Pirouz, P.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 313 KB

english, 2002

14

Coupled Interface Plasmons of Al Films on CdSe and CdS

Brillson, Leonard J.

Journal:

Physical Review Letters

Année:

1977

Langue:

english

Fichier:

PDF, 744 KB

english, 1977

15

Interdiffusion and chemical trapping at InP(110) interfaces with Au, Al, Ni, Cu, and Ti

Shapira, Yoram, Brillson, L. J., Katnani, A. D., Margaritondo, G.

Journal:

Physical Review B

Année:

1984

Langue:

english

Fichier:

PDF, 789 KB

english, 1984

16

Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces

Vitomirov, I. M., Raisanen, A., Finnefrock, A. C., Viturro, R. E., Brillson, L. J., Kirchner, P. D., Pettit, G. D., Woodall, J. M.

Journal:

Physical Review B

Année:

1992

Langue:

english

Fichier:

PDF, 837 KB

english, 1992

17

Fermi-level pinning and intrinsic surface states in cleaved GaP

Chiaradia, P., Fanfoni, M., Nataletti, P., De Padova, P., Brillson, L. J., Slade, M. L., Viturro, R. E., Kilday, D., Margaritondo, G.

Journal:

Physical Review B

Année:

1989

Langue:

english

Fichier:

PDF, 201 KB

english, 1989

18

Origin of surface and metal-induced interface states in InP

Shapira, Y., Brillson, L. J., Heller, A.

Journal:

Physical Review B

Année:

1984

Langue:

english

Fichier:

PDF, 765 KB

english, 1984

19

Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces

Chang, S., Vitomirov, I. M., Brillson, L. J., Rioux, D. F., Kirchner, P. D., Pettit, G. D., Woodall, J. M.

Journal:

Physical Review B

Année:

1991

Langue:

english

Fichier:

PDF, 182 KB

english, 1991

20

Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, L. J. Brillson

Année:

2001

Langue:

english

Fichier:

PDF, 496 KB

english, 2001

21

Atomic interdiffusion at Au-GaAs interfaces studied with Al interlayers

Brillson, L. J., Bauer, Robert S., Bachrach, R. Z., Hansson, G.

Journal:

Physical Review B

Année:

1981

Langue:

english

Fichier:

PDF, 1.04 MB

english, 1981

22

Electric-Field-Induced Raman Scattering by LO Phonons in an External Magnetic Field

Brillson, L. J., Burstein, E.

Journal:

Physical Review B

Année:

1972

Langue:

english

Fichier:

PDF, 527 KB

english, 1972

23

Deep level defects and doping in high Al mole fraction AlGaN

Bradley, S. T., Goss, S. H., Brillson, L. J., Hwang, J., Schaff, W. J.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2003

Langue:

english

Fichier:

PDF, 615 KB

english, 2003

24

Chemical reactions and local charge redistribution at metal-CdS and CdSe interfaces

Brillson, L. J.

Journal:

Physical Review B

Année:

1978

Langue:

english

Fichier:

PDF, 1.01 MB

english, 1978

25

4H- to 3C-SiC Polytypic Transformation during Oxidation

Okojie, Robert S., Xhang, Ming, Pirouz, P., Tumakha, Sergey P., Jessen, Gregg, Brillson, Leonard J.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 383 KB

2002

26

A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC

Ewing, D.J., Wahab, Qamar-ul, Tumakha, Sergey P., Brillson, Leonard J., Ma, X.Y., Sudarshan, Tangali S., Porter, L.M.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 508 KB

english, 2006

27

Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

Rutkowski, M. M., McNicholas, K. M., Zeng, Zhaoquan, Brillson, L. J.

Journal:

Review of Scientific Instruments

Année:

2013

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2013

28

Erratum: “Review of using gallium nitride for ionizing radiation detection” [Appl. Phys. Rev. 2 , 031102 (2015)]

Wang, Jinghui, Mulligan, Padhraic, Brillson, Leonard, Cao, Lei R.

Journal:

Applied Physics Reviews

Année:

2019

Langue:

english

Fichier:

PDF, 982 KB

english, 2019

29

Charles B. Duke

Brillson, Leonard J., Dylla, H. Frederick, Feibelman, Peter J.

Journal:

Année:

2020

Fichier:

PDF, 244 KB

2020

30

Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces

X.L. Sun, S.H. Goss, L.J. Brillson, D.C. Look, R.J. Molnar

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 113 KB

english, 2001

31

Advances in understanding metal-semiconductor interfaces by surface science techniques

Journal:

Journal of Physics and Chemistry of Solids

Année:

1983

Langue:

english

Fichier:

PDF, 3.84 MB

english, 1983

32

Semiconductor interfaces

G. Margaritondo, L.J. Brillson, V. Brusic, J.R. Chelikowsky, R.W. Grant, G.W. Rubloff

Journal:

Materials Science and Engineering

Année:

1986

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1986

33

Electron energy-loss spectroscopy of tetracyanoquinodimethane, TCNQ, tetrathiafulvalene, TTF, and the salt TTF-TCNQ

J.J. Ritsko, L.J. Brillson, D.J. Sandman

Journal:

Solid State Communications

Année:

1977

Langue:

english

Fichier:

PDF, 358 KB

english, 1977

34

Secondary illumination effects in the photoemission spectra of GaAs and CdS

G. Margaritondo, L.J. Brillson, N.G. Stoffel

Journal:

Solid State Communications

Année:

1980

Langue:

english

Fichier:

PDF, 536 KB

english, 1980

35

Soft X-ray photoemission study of annealed Al-overlayers on GaAs (110)

A. Khan, L.J. Brillson, A.D. Katnani, G. Margaritondo

Journal:

Solid State Communications

Année:

1981

Langue:

english

Fichier:

PDF, 264 KB

english, 1981

36

Reflections of a Burstein student

Leonard J. Brillson

Journal:

Solid State Communications

Année:

1986

Langue:

english

Fichier:

PDF, 81 KB

english, 1986

37

Initial stages of GaP(1 1 0) oxidation

P. Chiaradia, M. Fanfoni, P. De Padova, P. Nataletti, L.J. Brillson, R.E. Viturro, M.L. Slade, G. Margaritondo, M.K. Kelly, D. Kilday, N. Tache

Journal:

Solid State Communications

Année:

1988

Langue:

english

Fichier:

PDF, 354 KB

english, 1988

38

Impact of surface processing on Al/GaAs(100) interface states

I.M. Vitomirov, A.D. Raisanen, L.J. Brillson, P.D. Kirchner, G.D. Pettit, J.M. Woodall

Journal:

Solid State Communications

Année:

1992

Langue:

english

Fichier:

PDF, 497 KB

english, 1992

39

Interface states at metal-compound semiconductor junctions

L.J Brillson, S Chang, J Shaw, R.E Viturro

Journal:

Année:

1990

Langue:

english

Fichier:

PDF, 457 KB

english, 1990

40

Photovoltage saturation and recombination at Al-GaAs interfacial layers

L.J. Brillson, D.W. Kruger

Journal:

Surface Science Letters

Année:

1981

Langue:

english

Fichier:

PDF, 42 KB

english, 1981

41

Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfaces

L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, R. Daniels, G. Margaritondo

Journal:

Surface Science Letters

Année:

1983

Langue:

english

Fichier:

PDF, 82 KB

english, 1983

42

Oxygen diffusion and reaction at annealed InSb MOS interfaces

J. Bregman, Yoram Shapira, Z. Calahorra, LeonardJ. Brillson

Journal:

Surface Science Letters

Année:

1986

Langue:

english

Fichier:

PDF, 128 KB

english, 1986

43

Promoting and characterizing new chemical structure at metal-semiconductor interfaces

Journal:

Surface Science Letters

Année:

1986

Langue:

english

Fichier:

PDF, 51 KB

english, 1986

44

The structure and properties of metal-semiconductor interfaces

Journal:

Surface Science Reports

Année:

1982

Langue:

english

Fichier:

PDF, 9.65 MB

english, 1982

45

Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies

L.J. Brillson, I.M. Vitomirov, A. Raisanen, S. Chang, R.E. Viturro, P.D. Kirchner, G.D. Pettit, J.M. Woodall

Journal:

Applied Surface Science

Année:

1993

Langue:

english

Fichier:

PDF, 818 KB

english, 1993

46

Photoemission studies of reactive diffusion and localized doping at II–VI compound semiconductor-metal interfaces

N.G. Stoffel, R. Daniels, L.J. Brillson, C.F. Brucker, A. Katnani, G. Margaritondo

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 236 KB

english, 1983

47

Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation

L.J. Brillson, Y. Dong, D. Doutt, D.C. Look, Z.-Q. Fang

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 511 KB

english, 2009

48

Interaction of metals with semiconductor surfaces

Journal:

Applications of Surface Science

Année:

1982

Langue:

english

Fichier:

PDF, 1.12 MB

english, 1982

49

Advances in characterizing and controlling metal-semiconductor interfaces

Journal:

Applications of Surface Science

Année:

1985

Langue:

english

Fichier:

PDF, 912 KB

english, 1985

50

Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces

Leonard J. Brillson, Shawn T. Bradley, Sergey H. Tumakha, Stephen H. Goss, Xiaoling L. Sun, Robert S. Okojie, J. Hwang, William J. Schaff

Journal:

Applied Surface Science

Année:

2005

Langue:

english

Fichier:

PDF, 327 KB

english, 2005